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Failure Is Just the Beginning
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2012-10-21
FA usage from laser-assisted tech
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At FA applications, there are a lot of chances to localize defect by related laser-assisted techniques just like optical beam induced res...
1 comment:
2012-10-11
FA Critical Tech : EDX (Energy dispersive X-ray spectroscopy)
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At FA field, EDX (Energy dispersive X-ray spectroscopy) is one of the most important technology for elemental analysis or chemical charac...
2012-10-09
[Contributor: R. Carpenter] Knock Atoms Off by FIB
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In our FA procedure, nano machines or devices require manufacturing very small parts for their construction, and extracting small specime...
2 comments:
2012-10-08
Familiar with Semiconductor Defects
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In the FA lab, there are many kinds of defect modes were revealed. The author classify systematically these defects and could be a gener...
2012-10-06
Tip selection for the resonance frequency / the force constant
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For C-AFM utilization, tip parameters are most important to determine the image quality and I-V characteristic correctness. For example...
2012-09-28
LADA (Laser-assisted device alteration) Introduction
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Laser-assisted device alteration (LADA) is a laser-based timing analysis technique used in the failure analysis of semiconductor devices...
2012-09-26
Failure analysis using Liquid crystal Imaging - Understanding the procedure
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Integrated circuits are getting more complicated all the time, necessitating a need for a wide variety of analysis techniques to figure o...
1 comment:
2012-09-23
Seebeck effect
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Seebeck effect imaging (SEI) uses a laser to generate thermal gradients in conductors . The thermal gradients induced generate corresp...
TIVA (Thermally induced voltage alteration)
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Thermally induced voltage alteration (TIVA) is an imaging technique which uses a laser beam to pinpoint the location of electrical short...
OBIRCH (Optical beam induced resistance change)
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Optical beam induced resistance change (OBIRCH) is an imaging technique which uses a laser beam to induce a thermal change in the device...
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